Feb 26, 2018 Buku Persamaan Ic Dan Transistor As A Switch. 2/26/2018 0 Comments. IC regulator untuk bias MOSFET,tipe 7805. Transistor Driver boleh dipasang juga. Sekedar saran untuk transistor Driver anda dapat menggunakan jenis BD139 yang kualitas bagus dan mampu untuk RF. Bisa juga diganti 2SC1383, ataupun 2N2219A.
[Click the image to enlarge it]
S8050 Pin Description
Pin Number | Pin Name | Description |
1 | Emitter | Current Drains out through emitter |
2 | Base | Controls the biasing of transistor |
3 | Collector | Current flows in through collector |
Features
- Low Voltage, High Current NPN Transistor
- Small Signal Transistor
- Maximum Power: 2 Watts
- Maximum DC Current Gain (hFE) is 400
- Continuous Collector current (IC) is 700mA
- Base- Emitter Voltage (VBE) is 5V
- Collector-Emitter Voltage (VCE) is 20V
- Collector-Base Voltage (VCB) is 30V
- High Used in push-pull configuration doe Class B amplifiers
- Available in To-92 Package
Note: Complete Technical Details can be found at the S8050 datasheet given at the end of this page.
Complementary PNP Transistors
S8550
Alternative NPN Transistors
S9014, MPSA42, SS8050, BC547, 2N3904, 2N2369, 2N3055, 2N3904, 2N3906
S8050 Equivalent Transistors
2N5830, S9013
Brief Description on S8050
S8050 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. It has a maximum gain value of 400; this value determines the amplification capacity of the transistor normally S8050. Since it is very high it is normally used for amplification purposes. However at a normal operating collector current the typical value of gain will be 110. The maximum amount of current that could flow through the Collector pin is 700mA, hence we cannot drive loads that consume more than 700mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA.
When this transistor is fully biased then it can allow a maximum of 700mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Collector-Base (VCB) could be 20V and 30V respectively. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region.
S8050 in Push-Pull Configuration
As mentioned in the features the S8050 transistor is commonly used in push pull configuration with Class B amplifier. So let us discuss how that is done.
A push pull amplifier, commonly known as Class B amplifier is type of multistage amplifier commonly used for audio amplification of loudspeakers. It is very simple to construct and requires two identical complimentary transistors operate. By complimentary it means that we need a NPN transistor and its equivalent PNP transistor. Like here the NPN transistor will be S8050 and its equivalent PNP transistor will be S8550. A simple circuit diagram of the Class B amplifier with the using the S8050 is shown below.
Applications
- Audio Amplification Circuits
- Class B Amplifiers
- Push pull Transistors
- Circuits where high gain is required
- Low signal applications
2D model of the component
If you are designing a PCB or Perf board with this component then the following picture from the S8050 transistor Datasheet will be useful to know its package type and dimensions.
Type | |
---|---|
Working principle | N-channel |
Pin configuration | G = Gate, D = Drain, S = Source. The symbol doesn't always show the internal diode formed between the substrate and the source/drain/channel. |
Electronic symbol |
The 2N7000 is housed in a TO92 package, with lead 1 connected as the source, lead 2 as the gate, and lead 3 as the drain. The BS170 has the source and drain leads interchanged.
The 2N7002 variant is packaged in a TO-236 surface-mount package.
The 2N7000 and BS170 are two different N-channel, enhancement-modeMOSFETs used for low-power switching applications, with different lead arrangements and current ratings. They are sometimes listed together on the same datasheet with other variants 2N7002, VQ1000J, and VQ1000P.[1]
The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use.[2]The BS250P is 'a good p-channel analog of the 2N7000.'[3]
Packaged in a TO-92 enclosure, both the 2N7000 and BS170 are 60 V devices. The 2N7000 can switch 200 mA. The BS170 can switch 500 mA, with a maximum on-resistance of 5 Ω at 10 V Vgs.
The 2N7002 is another different part with different resistance, current rating and package. The 2N7002 is in a TO-236 package, also known as 'small outline transistor' SOT-23 surface-mount, which is the most commonly used three-lead surface-mount package.[4]
Applications[edit]
The 2N7000 has been referred to as a 'FETlington' and as an 'absolutely ideal hacker part.'[5] The word 'FETlington' is a reference to the Darlington-transistor-like saturation characteristic.
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays.[1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages:
- low threshold voltage means no gate bias required
- high input impedance of the insulated gate means almost no gate current is required
- consequently no current-limiting resistor is required in the gate input
- MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature
The main disadvantages of these FETs over bipolar transistors in switching are the following:
- susceptibility to cumulative damage from static discharge prior to installation
- circuits with external gate exposure require a protection gate resistor or other static discharge protection
- Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor
References[edit]
- ^ ab'2N7000/2N7002, VQ1000J/P, BS170'(PDF). Vishay Siliconix datasheet. Retrieved 28 March 2011.
- ^H. Ward Silver (2005). Two-way radios & scanners for dummies. p. 237. ISBN0-7645-9582-2.
- ^Lucio Di Jasio; Tim Wilmshurst; Dogan Ibrahim (2007). PIC microcontrollers. Newnes. p. 520. ISBN0-7506-8615-4.
- ^Ray P. Prasad (1997). Surface mount technology: principles and practice (2nd ed.). Springer. p. 112. ISBN0-412-12921-3.
- ^Lancaster, Don (February 1986). 'Hardware hacker'. Modern Electronics. Richard Ross. 3 (2): 115. ISSN0748-9889.
External links[edit]
- Electric Field Sensor demonstrates extremely high gate impedance with a simple LED circuit
- Driving a single MOSFET Detailed description of usage of a similar MOSFET
- Datasheets
- 2N7002, 300mA, SOT-23 case, NXP Semiconductors
- NX7002AK, 300mA, SOT-23 case, NXP Semiconductors
- 2N7000, 200mA, TO-92 case, On Semiconductor
- BS170, 500mA, TO-92 case, On Semiconductor
Retrieved from 'https://en.wikipedia.org/w/index.php?title=2N7000&oldid=915142921'